Memristive switching of MgO based magnetic tunnel junctions

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism

Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB

This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 degree C. An annealing at more than 325 degree C significantly increases the coercivity, Hc, indicating the onset of crystallization.Comment: 4 pages, 3 figure

Anomalous Hall effect in the Co-based Heusler compounds Co2_{2}FeSi and Co2_{2}FeAl

The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $\rho_{xx}$ as well as the anomalous Hall resistivity $\rho_{ahe}$. Analyzing the scaling behavior of $\rho_{ahe}$ in terms of $\rho_{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds

Low frequency noise due to magnetic inhomogeneities in submicron FeCoB/MgO/FeCoB magnetic tunnel junctions

We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675{\mu}m2. In the smaller area junctions we found an unexpected random telegraph noise (RTN1), deeply in the parallel state, possibly due to stray field induced MI/DWs in the hard layer. The second noise source (RTN2) is observed in the antiparallel state for the largest junctions. Strong asymmetry of RTN2 and of related resistance steps with current indicate spin torque acting on the MI/DWs in the soft layer at current densities below 5x10^5 A/cm2.Comment: 12 pages, 4 figure

Fermionic functional renormalization group for first-order phase transitions: a mean-field model

First-order phase transitions in many-fermion systems are not detected in the susceptibility analysis of common renormalization-group (RG) approaches. Here we introduce a counterterm technique within the functional renormalization-group (fRG) formalism which allows access to all stable and metastable configurations. It becomes possible to study symmetry-broken states which occur through first-order transitions as well as hysteresis phenomena. For continuous transitions, the standard results are reproduced. As an example, we study discrete-symmetry breaking in a mean-field model for a commensurate charge-density wave. An additional benefit of the approach is that away from the critical temperature for the breaking of discrete symmetries large interactions can be avoided at all RG scales.Comment: 17 pages, 8 figures. v2 corrects typos, adds references and a discussion of the literatur

Resonance magneto-resistance in double barrier structure with spin-valve

The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000% .Comment: 3 pages, 4 figure

Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance

The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO interface is important to interpret the strong annealing temperature dependence of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel junctions, which increases with annealing temperature from 20% after annealing at 200C up to a maximum value of 112% after annealing at 350C. While the well defined nearest neighbor ordering indicating crystallinity of the MgO barrier does not change by the annealing, a small amount of interfacial Fe-O at the lower Co-Fe-B / MgO interface is found in the as grown samples, which is completely reduced after annealing at 275C. This is accompanied by a simultaneous increase of the Fe magnetic moment and the tunnel magnetoresistance. However, the TMR of the MgO based junctions increases further for higher annealing temperature which can not be caused by Fe-O reduction. The occurrence of an x-ray absorption near-edge structure above the Fe and Co L-edges after annealing at 350C indicates the recrystallization of the Co-Fe-B electrode. This is prerequisite for coherent tunneling and has been suggested to be responsible for the further increase of the TMR above 275C. Simultaneously, the B concentration in the Co-Fe-B decreases with increasing annealing temperature, at least some of the B diffuses towards or into the MgO barrier and forms a B2O3 oxide

Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers

This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0 to 1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coercivity depends on the net magnetic moment, i.e. the thickness difference of the two CoFeB layers. The antiferromagnetic coupling is almost independent on the annealing temperatures up to 300 degree C while an annealing at 350 degree C reduces the coupling and increases the coercivity, indicating the onset of crystallization. Used as a soft electrode in a magnetic tunnel junction, a high tunneling magnetoresistance of about 50%, a well defined plateau and a rectangular switching behavior is achieved.Comment: 3 pages, 3 figure

Slice Energy in Higher Order Gravity Theories and Conformal Transformations

We study the generic transport of slice energy between the scalar field generated by the conformal transformation of higher-order gravity theories and the matter component. We give precise relations for this exchange in the cases of dust and perfect fluids. We show that, unless we are in a stationary spacetime where slice energy is always conserved, in non-stationary situations contributions to the total slice energy depend on whether or not test matter follows geodesics in both frame representations of the dynamics, that is on whether or not the two conformally related frames are physically indistinguishable.Comment: 18 pages, references added, remark added in last Section related to the choice of physical frame, various other improvements, final version to appear in Gravitation and Cosmolog